Methods of forming a metal pattern and semiconductor device structure
AssigneeMicron Technology, Inc.
InventorsChristopher J. Gambee, G. Alan Vonkrosigk
Life of this patent
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Abstract
A method of forming a metal pattern on a dielectric material that comprises forming at least one trench in a photosensitive, insulative material is disclosed. The at least one trench may be positioned over at least one bond pad. A metal is formed over the photosensitive, insulative material and into the at least one trench and a photoresist material is formed over the metal. A portion of the photoresist material may be removed to expose elevated areas of the metal such that a remaining portion of the photoresist material does not extend beyond sidewalls of the at least one trench and onto the elevated areas of the metal. The metal may be exposed laterally beyond the remaining portion of the photoresist material.
Claims21
A method of forming a metal pattern, comprising:
- forming at least one trench in a photosensitive, insulative material, the at least one trench positioned over at least one bond pad;
- forming a metal over the photosensitive, insulative material and into the at least one trench;
- forming a photoresist material over the metal;
- removing a portion of the photoresist material to expose elevated areas of the metal such that a remaining portion of the photoresist material does not extend beyond sidewalls of the at least one trench onto the elevated areas of the metal;
- and
- removing the metal exposed laterally beyond the remaining portion of the photoresist material.
A method of forming a metal pattern, comprising:
- removing a portion of a dielectric material to form at least one trench therein and overlying a bond pad on a substrate;
- forming a metal over the dielectric material and in the at least one trench;
- forming a photoresist material over the metal;
- removing a portion of the photoresist material adjacent the at least one trench to expose elevated areas of the metal;
- and
- removing the metal external to the at least one trench to form sidewalls of a remaining portion of the metal that protrude above the elevated areas of the dielectric material.
A semiconductor device structure, comprising:
- at least one bond pad;
- a dielectric material overlying the at least one bond pad, the dielectric material comprising a photosensitive, insulative material;
- at least one trench in the dielectric material and positioned over the at least one bond pad;
- a metal overlying the dielectric material and surfaces of the at least one trench, sidewalls of the metal protruding above unrecessed surfaces of the dielectric material;
- and
- a photoresist material overlying the metal.
Dependencies are inferred from the claim text.