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US 2011/0210447 A1Published application
Contact elements of semiconductor devices comprising a continuous transition to metal lines of a metallization layer
AssigneeGlobalfoundries Inc.
InventorsRobert Seidel, Kai Frohberg, Carsten Peters
Life of this patent
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Abstract
In sophisticated semiconductor devices, contact elements in the contact level may be formed by patterning the contact openings and filling the contact openings with the metal of the first metallization layer in a common deposition sequence. To this end, in some illustrative embodiments, a sacrificial fill material may be provided in contact openings prior to depositing the dielectric material of the first metallization layer.
Claims20
A method of forming a contact element in a semiconductor device, the method comprising:
- forming a sacrificial fill material in a contact opening formed in an interlayer dielectric material, said contact opening connecting to a contact area of a circuit element formed in a semiconductor region of said semiconductor device;
- forming a dielectric material of a metallization layer above said interlayer dielectric material including said sacrificial fill material;
- forming a trench in said dielectric material so as to connect to said contact opening;
- removing said sacrificial fill material through said trench;
- and
- filling said contact opening and said trench with a conductive material.
3 more elements
A method, comprising:
- forming a contact opening in an interlayer dielectric material formed above and adjacent to a circuit element of a semiconductor device;
- forming a dielectric material of a first metallization layer above said interlayer dielectric material and said contact opening;
- forming a trench of a metal line of said first metallization layer in said dielectric material so as to connect to said contact opening;
- and
- filling said contact opening and said trench with a conductive material by performing a deposition sequence commonly for said contact opening and said trench.
2 more elements
A semiconductor device, comprising:
- a circuit element formed in and above a semiconductor region, said circuit element comprising a contact area;
- an interlayer dielectric material formed above and adjacent to said circuit element;
- a contact element formed in said interlayer dielectric material and connecting to said contact area;
- and
- a metallization layer comprising a dielectric material and a conductive line formed in said dielectric material, said conductive line connecting to said contact element, said conductive line comprising at least one conductive material extending continuously to a bottom of said contact element.
2 more elements
Dependencies are inferred from the claim text.