Device with ground plane for high frequency signal transmission and method therefor

A method for forming a semiconductor structure, the method comprising:

• forming an isolation region in a semiconductor substrate;
• forming a conductive layer over the isolation region, wherein the conductive layer comprises a polysilicon-containing layer over the isolation region and a silicide layer over the polysilicon-containing layer, and wherein a boundary of the isolation region fully surrounds a boundary of the conductive layer;
• forming a first dielectric layer over the conductive layer;
• forming a plurality of conductive vias extending through the first dielectric layer to the silicide layer;
• forming a second dielectric layer over the first dielectric layer;
• and
• forming a metal-containing conductive ground plane in the second dielectric layer, wherein:
• the metal-containing conductive ground plane is continuous;
• each of the plurality of conductive vias is in electrical contact with the metal-containing conductive ground plane, and
• the metal-containing conductive ground plane comprising an opening, wherein, in a vertical direction perpendicular to a major surface of the conductive layer, a perimeter of the opening is fully encompassed by a boundary of the conductive layer.

A semiconductor structure, comprising:

• a semiconductor substrate having an isolation region;
• a conductive layer over the isolation region, wherein a boundary of the isolation region fully surrounds a boundary of the conductive layer;
• a first dielectric layer over the conductive layer;
• a plurality of conductive vias extending through the first dielectric layer to the conductive layer and electrically contacting the conductive layer;
• a second dielectric layer over the first dielectric layer;
• and
• a conductive ground plane in the second dielectric layer, wherein each of the plurality of conductive vias is in electrical contact with the conductive ground plane, and the conductive ground plan comprises an opening, wherein the opening is located directly over the conductive layer, and a perimeter of the opening is fully encompassed by the boundary of the conductive layer.