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US 2011/0210425 A1Published application
Formation of group iii-v material layers on patterned substrates
AssigneeApplied Materials, Inc.
InventorsJie Su, Tuoh-Bin Ng, Olga Kryliouk, Sang Won Kang, Jie Cui
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Abstract
Methods of epitaxy of gallium nitride, and other such related films, and light emitting diodes on patterned sapphire substrates, and other such related substrates, are described.
Claims20
A method of fabricating a group III-V material on a patterned substrate, the method comprising:
- providing a patterned substrate having a plurality of discrete pyramids thereon, each pyramid having approximately the same dimensions;
- and
- forming a group III-V material on the patterned substrate, continuous between and on each of the discrete pyramids.
A group III-V material and patterned substrate pairing, comprising:
- a patterned substrate having a plurality of discrete pyramids thereon, each pyramid having approximately the same dimensions;
- and
- a group III-V material disposed on the patterned substrate, continuous between and on each of the discrete pyramids.
A reaction chamber for fabricating a group III-V material on a patterned substrate, the chamber configured to:
- receive a patterned substrate having a plurality of discrete pyramids thereon, each pyramid having approximately the same dimensions;
- and
- form a group III-V material on the patterned substrate, continuous between and on each of the discrete pyramids.
Dependencies are inferred from the claim text.