Integrated circuit devices having a strontium ruthenium oxide interface
AssigneeMicron Technology, Inc.
InventorsBhaskar Srinivasan, Vassil Antonov, John Smythe
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Abstract
Strontium ruthenium oxide provides an effective interface between a ruthenium conductor and a strontium titanium oxide dielectric. Formation of the strontium ruthenium oxide includes the use of atomic layer deposition to form strontium oxide and subsequent annealing of the strontium oxide to form the strontium ruthenium oxide. A first atomic layer deposition of strontium oxide is preformed using water as an oxygen source, followed by a subsequent atomic layer deposition of strontium oxide using ozone as an oxygen source.
Claims20
An integrated circuit device, comprising:
- ruthenium;
- a strontium titanium oxide dielectric overlying the ruthenium;
- and
- a strontium ruthenium oxide interface interposed between the ruthenium and the strontium titanium oxide dielectric;
- wherein the strontium ruthenium oxide interface is formed using a method comprising:
- performing an atomic layer deposition process using a strontium precursor as a first precursor and water vapor as a second precursor to form a first strontium oxide material on the ruthenium;
- performing an atomic layer deposition process using a strontium precursor as a first precursor and ozone as a second precursor to form a second strontium oxide material on the first strontium oxide material;
- and
- annealing the ruthenium, the first strontium oxide material and the second strontium oxide material to form the strontium ruthenium oxide interface.
A capacitor, comprising:
- a ruthenium electrode;
- a second electrode;
- a strontium titanium oxide dielectric interposed between the ruthenium electrode and the second electrode;
- and
- a strontium ruthenium oxide interface interposed between the ruthenium electrode and the strontium titanium oxide dielectric;
- wherein the strontium ruthenium oxide interface is formed using a method comprising:
- performing an atomic layer deposition process using a strontium precursor as a first precursor and water vapor as a second precursor to form a first strontium oxide material on the ruthenium electrode;
- performing an atomic layer deposition process using a strontium precursor as a first precursor and ozone as a second precursor to form a second strontium oxide material on the first strontium oxide material;
- and
- annealing the ruthenium electrode, the first strontium oxide material and the second strontium oxide material to form the strontium ruthenium oxide interface.
A memory device, comprising:
- an array of memory cells, the memory cells comprising an access transistor and a capacitor, wherein at least one of the capacitors comprises:
- a ruthenium electrode;
- a second electrode;
- a strontium titanium oxide dielectric interposed between the ruthenium electrode and the second electrode;
- and
- a strontium ruthenium oxide interface interposed between the ruthenium electrode and the strontium titanium oxide dielectric;
- wherein the strontium ruthenium oxide interface is formed using a method comprising:
- forming a first strontium oxide material on the ruthenium electrode by oxidizing a strontium precursor with water vapor;
- forming a second strontium oxide material on the first strontium oxide material by oxidizing a strontium precursor with ozone;
- and
- annealing the ruthenium electrode, the first strontium oxide material and the second strontium oxide material to form the strontium ruthenium oxide interface.
Dependencies are inferred from the claim text.