Semiconductor Device Having IPD Structure with Smooth Conductive Layer and Bottom-Side Conductive Layer

A semiconductor device, comprising:

• a smooth conductive layer;
• a first insulating layer disposed over a first surface of the smooth conductive layer;
• a first conductive layer disposed over the first insulating layer;
• a second insulating layer disposed over the first insulating layer and the first conductive layer;
• and
• a second conductive layer disposed below a second surface of the smooth conductive layer that is opposite the first surface of the smooth conductive layer.

A semiconductor device, comprising:

• a first conductive layer;
• a first insulating layer disposed over a first surface of the first conductive layer;
• a second insulating layer disposed over the first surface of the first conductive layer;
• a second conductive layer disposed over the first insulating layer;
• and
• a third conductive layer disposed below a second surface of the first conductive layer that is opposite the first surface of the first conductive layer.

A semiconductor device, comprising:

• a smooth conductive layer;
• a first insulating layer disposed over a first surface of the smooth conductive layer;
• a first conductive layer disposed over the first insulating layer;
• a second insulating layer disposed over the first conductive layer;
• and
• a second conductive layer disposed below a second surface of the smooth conductive layer that is opposite the first surface of the smooth conductive layer.