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US 2011/0210418 A1Published application
Electrostatic Discharge Devices
AssigneeInfineon Technologies AG
InventorKai Esmark
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Abstract
Electrostatic discharge devices and methods of forming thereof are disclosed. In one embodiment, a semiconductor device includes an electrostatic discharge (ESD) device region disposed within a semiconductor body. A first ESD device is disposed in a first region of the ESD device region, and a second ESD device disposed in a second region of the ESD device region. The second region is separated from the first region by a first trench.
Claims33
A semiconductor device comprising:
- an electrostatic discharge (ESD) device region disposed within a semiconductor body;
- a first ESD device disposed in a first region of the ESD device region;
- and
- a second ESD device disposed in a second region of the ESD device region, the second region being separated from the first region by a first trench.
1 more element
A semiconductor device comprising:
- a first bipolar transistor having an emitter, a collector and a base region disposed in a first region of an electrostatic discharge (ESD) device region of a semiconductor substrate;
- a second bipolar transistor having an emitter, a collector and a base region disposed in a second region of the ESD device region;
- and
- a first trench disposed between the first and the second regions, the first trench isolating the first bipolar transistor from the second bipolar transistor.
1 more element
A method of forming a semiconductor device, the method comprising:
- forming a first bipolar transistor having an emitter, a collector and a base region in a first region of an electrostatic discharge (ESD) device region of a semiconductor substrate;
- forming a second bipolar transistor having an emitter, a collector and a base region in a second region of the ESD device region;
- and
- forming a first trench between the first and the second regions, the first trench isolating the first bipolar transistor from the second bipolar transistor.
1 more element
Dependencies are inferred from the claim text.