Memory element, memory device, and semiconductor device

A semiconductor device comprising:

• a substrate;
• a transistor over the substrate;
• a first insulating layer over the transistor;
• a first conductive layer over the first insulating layer;
• a second conductive layer over the first conductive layer;
• an organic compound layer interposed between the first conductive layer and the second conductive layer;
• a second insulating layer provided between the first conductive layer and the organic compound layer;
• and
• a third insulating layer provided between the second conductive layer and the organic compound layer,
• wherein the transistor is electrically connected to the first conductive layer,
• wherein the second insulating layer has concavity and convexity, and
• wherein the concavity of the second insulating layer is in contact with the first insulating layer.

A semiconductor device comprising:

• a substrate;
• a transistor over the substrate;
• an insulating layer over the transistor;
• a first conductive layer over the insulating layer;
• a second conductive layer over the first conductive layer;
• an organic compound layer interposed between the first conductive layer and the second conductive layer;
• a plurality of insulating particles each provided between the first conductive layer and the organic compound layer;
• and
• wherein the transistor is electrically connected to the first conductive layer,
• wherein the plurality of insulating particles is arranged to have concavity and convexity, and
• wherein the concavity of the plurality of insulating particles is in contact with the insulating layer.

A semiconductor device comprising:

• a substrate;
• a transistor over the substrate;
• an insulating layer over the transistor;
• a first conductive layer over the insulating layer;
• a second conductive layer over the first conductive layer;
• an organic compound layer interposed between the first conductive layer and the second conductive layer;
• a plurality of first insulating particles each provided between the first conductive layer and the organic compound layer;
• and
• a plurality of second insulating particles each provided between the second conductive layer and the organic compound layer;
• wherein the transistor is electrically connected to the first conductive layer,
• wherein the plurality of first insulating particles is arranged to have concavity and convexity, and
• wherein the concavity of the plurality of first insulating particles is in contact with the insulating layer.