Sensor device, method of manufacturing sensor device, motion sensor, and method of manufacturing motion sensor
AssigneeSeiko Epson Corporation
InventorTetsuya OTSUKI
Life of this patent
Estimating the term…
Abstract
A sensor device includes: a silicon substrate; a first electrode provided at an active surface side of the silicon substrate; an external connection terminal provided at the active surface side so as to be electrically connected to the first electrode; a stress relief layer provided between the silicon substrate and the external connection terminal; and a vibrating gyro element as a sensor element including a extraction electrode. The vibrating gyro element is held to the silicon substrate by connection between the extraction electrode and the external connection terminal.
Claims21
A sensor device comprising:
- a semiconductor substrate;
- a first electrode formed on an active surface side of the semiconductor substrate;
- an external connection terminal formed on the active surface side and electrically connected to the first electrode;
- a stress relief layer formed between the semiconductor substrate and the external connection terminal;
- a connection terminal formed on the active surface side of the semiconductor substrate;
- and
- a sensor element including a base, a vibrating section and a connection electrode, the vibration section extending from the base;
- the sensor element being held to the semiconductor substrate by a connection between the connection electrode and the external connection terminal.
A sensor device comprising:
- a semiconductor substrate;
- a first electrode formed on an active surface side of the semiconductor substrate;
- an external connection terminal formed on the active surface side and electrically connected to the first electrode;
- a stress relief layer formed between the semiconductor substrate and the external connection terminal;
- a connection terminal provided at the active surface side of the semiconductor substrate;
- a sensor element including a base, a vibrating section and a connection electrode, the vibration section extending from the base;
- and
- a plurality of leads provided at a surface side of the semiconductor substrate opposite the active surface,
- the connection terminal being electrically connected to one of the plurality of leads, and
- the sensor element being held to the semiconductor substrate by a mechanical connection between the connection electrode and the external connection terminal.
A method of manufacturing a sensor device comprising:
- forming a first electrode on an active surface side of a semiconductor substrate;
- forming a stress relief layer on the active surface side of the semiconductor substrate;
- forming an external connection terminal, which is electrically connected to the first electrode, on the stress relief layer;
- forming a connection terminal on the active surface side of the semiconductor substrate;
- preparing a sensor element including a base, a connection electrode and a vibrating section extending from the base;
- and
- connecting the external connection terminal of the semiconductor substrate and the connection electrode of the sensor element to each other.
A.method of manufacturing a sensor device comprising:
- forming a first electrode on an active surface side of a semiconductor substrate;
- forming a stress relief layer on the active surface side of the semiconductor substrate;
- forming an external connection terminal, which is electrically connected to the first electrode, on the stress relief layer;
- forming a connection terminal on the active surface side of the semiconductor substrate;
- preparing a lead frame including a plurality of leads;
- connecting a surface side of the semiconductor substrate opposite the active surface to the plurality of leads in a state positioned over the leads;
- connecting the connection terminal of the semiconductor substrate and the lead to each other;
- preparing a sensor element including a base, a connection electrode and a vibrating section extending from the base;
- and
- connecting the external connection terminal of the semiconductor substrate and the connection electrode of the sensor element to each other.
A method of manufacturing a motion sensor comprising:
- preparing a sensor device including
- a semiconductor substrate,
- a first electrode formed on an active surface side of the semiconductor substrate,
- an external connection terminal formed on the active surface side electrically connected to the first electrode,
- a stress relief layer formed between the semiconductor substrate and the external connection terminal,
- a connection terminal formed on the active surface side of the semiconductor substrate, a sensor element which includes a base, a vibrating section extending from the base and a connection electrode which is held to the semiconductor substrate by connection between the connection electrode and the external connection terminal;
- preparing a package which houses the sensor device inside;
- and
- housing the sensor device in the package.
A method of manufacturing a motion sensor comprising:
- preparing a sensor device which includes
- a semiconductor substrate, a first electrode formed on an active surface side of the semiconductor substrate,
- an external connection terminal formed on the active surface side electrically connected to the first electrode,
- a stress relief layer formed between the semiconductor substrate and the external connection terminal,
- a connection terminal formed on the active surface side of the semiconductor substrate, a sensor element including a base, a vibrating section extending from the base and a connection electrode, and
- a plurality of leads formed on a surface side of the semiconductor substrate opposite the active surface and in which the connection terminal is electrically connected to at least one of the plurality of leads and the sensor element is held to the semiconductor substrate by connection between the connection electrode and the external connection terminal;
- preparing a package which houses the sensor device inside;
- and
- housing the sensor device in the package.
A method of manufacturing a motion sensor comprising:
- preparing a plurality of sensor devices each of which includes
- a semiconductor substrate, a first electrode formed on an active surface side of the semiconductor substrate,
- an external connection terminal formed on the active surface side electrically connected to the first electrode,
- a stress relief layer provided between the semiconductor substrate and the external connection terminal,
- a connection terminal formed on the active surface side of the semiconductor substrate, a sensor element including a base, a vibrating section extending from the base and a connection electrode, and
- a plurality of leads formed on a surface side of the semiconductor substrate opposite the active surface and in which the connection terminal is electrically connected to at least one of the plurality of the leads and the sensor element is held to the semiconductor substrate by connection between the connection electrode and the external connection terminal;
- preparing a package which houses the plurality of sensor devices inside;
- and
- disposing and housing the plurality of sensor devices in the package such that an angle between principal surfaces of the sensor elements becomes substantially a right angle.
A gyro sensor device comprising:
- a substrate;
- a vibrating gyro element;
- a stress relief layer formed between the semiconductor substrate and the vibrating gyro element,
- the substrate and the vibrating gyro element are connected in a leadless manner.
Dependencies are inferred from the claim text.