Metal nitride film, semiconductor device using the metal nitride film, and manufacturing method of semiconductor device
AssigneeCanon Anelva Corporation
InventorsTakashi Nakagawa, Naomu Kitano
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Abstract
The present invention provides a metal nitride film that realizes an intended effective work function (for example, a high effective work function) and has EOT exhibiting no change or a reduced change, a semiconductor device using the metal nitride film, and a manufacturing method of the semiconductor device. The metal nitride film according to an embodiment of the present invention contains Ti, Al and N, wherein the metal nitride film has such molar fractions of Ti, Al and N as (N/(Ti+Al+N)) of 0.53 or more, (Ti/(Ti+Al+N)) of 0.32 or less, and (Al/(Ti+Al+N)) of 0.15 or less.
Claims11
A metal nitride film containing Ti, Al and N, wherein a molar fraction of Ti, Al and N of the metal nitride film, expressed as (N/(Ti+Al+N)), is 0.53 or more;
- a molar fraction of Ti, Al and N of the metal nitride film, expressed as (Ti/(Ti+Al+N)), is 0.32 or less;
- and a molar fraction of Ti, Al and N of the metal nitride film, expressed as (Al/(Ti+Al+N)), is 0.15 or less.
A manufacturing method of a semiconductor device provided with a metal nitride film, wherein:
- the method comprises the step of forming the metal nitride film, and
- a molar fraction of Ti, Al and N of the metal nitride film, expressed as (N/(Ti+Al+N)), is 0.53 or more;
- a molar fraction of Ti, Al and N of the metal nitride film, expressed as (Ti/(Ti+Al+N)), is 0.32 or less;
- and a molar fraction of Ti, Al and N of the metal nitride film, expressed as (Al/(Ti+Al+N)), is 0.15 or less.
Dependencies are inferred from the claim text.