Transistors comprising high-k metal gate electrode structures and adapted channel semiconductor materials
AssigneeGlobalfoundries Inc.
InventorsSven Beyer, Jan Hoentschel, Thilo Scheiper, Uwe Griebenow
Life of this patent
Estimating the term…
Abstract
In sophisticated semiconductor devices, a replacement gate approach may be applied, in which a channel semiconductor material may be provided through the gate opening prior to forming the gate dielectric material and the electrode metal. In this manner, specific channel materials may be provided in a late manufacturing stage for different transistor types, thereby providing superior transistor performance and superior flexibility in adjusting the electronic characteristics of the transistors.
Claims20
A method, comprising:
- forming a gate electrode structure of a transistor on a semiconductor region, said gate electrode structure comprising a placeholder material;
- removing said placeholder material so as to form a gate opening;
- forming a channel semiconductor material on a portion of said semiconductor region through said gate opening;
- and
- forming a gate dielectric material on said channel semiconductor material and an electrode material above said gate dielectric material within said gate opening.
A method of forming a semiconductor device, the method comprising:
- forming a first channel semiconductor material on a portion of a first semiconductor region through a first opening formed in a first gate electrode structure;
- forming a second channel semiconductor material on a portion of a second semiconductor region through a second opening formed in a second gate electrode structure, said first and second channel semiconductor materials differing in at least one material characteristic;
- and
- forming a gate dielectric material and an electrode material in said first and second openings.
A semiconductor device, comprising:
- a semiconductor region comprising an epitaxially grown channel region laterally embedded between drain and source regions, said channel region differing from said drain and source region in a doping level and a material composition;
- and
- a gate electrode structure formed on a top surface of said channel region, said gate electrode structure comprising a metal-containing electrode material and a high-k dielectric material formed above said channel region, said high-k dielectric material being formed so as to laterally enclose said metal-containing electrode material.
Dependencies are inferred from the claim text.