Semiconductor Device
AssigneeHynix Semiconductor Inc.
InventorJoong Sik Kim
Life of this patent
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Abstract
A method for fabricating a semiconductor device comprises: performing a thermal process to expanding a local doped region formed between gate patterns on a semiconductor substrate; and etching a central region of an expanded local doped region so that the expanded local doped region remains at the total area of sidewalls of floating bodies isolated from each other.
Claims5
A semiconductor device comprising gate patterns and floating bodies, each floating body being formed under each of the gate patterns and having sidewalls, wherein a local doped region is formed to entirely cover sidewalls of each floating body to isolate the floating bodies from each other.
Dependencies are inferred from the claim text.