Semiconductor device

Abstract

According to one embodiment, the semiconductor device includes a drift region including a semiconductor of a first conductivity type; a first semiconductor region of a second conductivity type provided adjacently to the drift region; a main electrode, a plurality of first gate electrodes and a second gate electrode. The main electrode is provided adjacently to the first semiconductor region and electrically connected to the first semiconductor region, the first semiconductor region being disposed between the drift region and the main electrode. The first gate electrodes are provided along a boundary between the drift region and the first semiconductor region. The first gate electrode has a trench structure and faces the drift region and the first semiconductor region via a first gate insulating film. The second gate electrode of the trench structure is provided along the boundary between the drift region and the first semiconductor region. The second gate electrode is disposed between the two first gate electrodes and faces the drift region and the first semiconductor region via a second gate insulating film. A first portion facing the first semiconductor region in the second gate electrode is shorter than a second portion facing the first semiconductor region in the first gate electrode in a direction from the boundary to the main electrode. The main electrode is extended to a position close to the second gate electrode in the trench provided in the direction from the main electrode to the second gate electrode between the two first gate electrodes. The main electrode is in contact with the first semiconductor region exposed to an inner wall surface of the trench between an end of the first gate electrode on the main electrode side and an end of the second gate electrode on the main electrode side.

Dependencies are inferred from the claim text.