Mos device with varying trench depth
AssigneeAlpha and Omega Semiconductor Incorporated
InventorsAnup Bhalla, Xiaobin Wang
Life of this patent
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Abstract
A semiconductor device includes a drain region comprising an epitaxial layer, a body disposed in the epitaxial layer, a source embedded in the body, a gate trench extending into the epitaxial layer, a gate disposed in the gate trench, an active region contact trench extending through the source, and an active region contact electrode disposed within the active region contact trench. The active region contact trench has a first width associated with a first region that is in proximity to a bottom portion of the body and a second width associated with a second region that is in proximity to a bottom portion of the source. The first width is substantially different from the second width.
Claims15
A semiconductor device comprising:
- a drain region comprising an epitaxial layer;
- a body disposed in the epitaxial layer;
- a source embedded in the body;
- a gate trench extending into the epitaxial layer;
- a gate disposed in the gate trench;
- an active region contact trench extending through the source, the active region contact trench having a first width associated with a first region that is in proximity to a bottom portion of the body and a second width associated with a second region that is in proximity to a bottom portion of the source, the first width being substantially different from the second width;
- and
- an active region contact electrode disposed within the active region contact trench.
Dependencies are inferred from the claim text.