Transistor Comprising a Buried High-K Metal Gate Electrode Structure
AssigneeGlobalfoundries Inc.
InventorsUwe Griebenow, Jan Hoentschel, Thilo Scheiper, Sven Beyer
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Abstract
A buried gate electrode structures may be formed in the active regions of sophisticated transistors by providing a recess in the active region and incorporating appropriate gate materials, such as a high-k dielectric material and a metal-containing electrode material. Due to the recessed configuration, the channel length and thus the channel controllability may be increased, without increasing the overall lateral dimensions of the transistor structure.
Claims20
A method, comprising:
- forming a recess in a semiconductor region of a semiconductor device;
- coating inner sidewall surface areas of said recess with a dielectric material layer that comprises a high-k dielectric material;
- forming a gate electrode structure in said recess by forming an electrode material on said dielectric material layer;
- and
- forming drain and source regions in said semiconductor region adjacent to said gate electrode structure.
A method of forming a transistor of a semiconductor device, the method comprising:
- forming a gate dielectric material on sidewalls and a bottom of a recess formed in a semiconductor region, said recess extending to a first depth in said semiconductor region;
- providing an electrode material in said recess;
- and
- forming drain and source regions in said semiconductor region, said drain and source regions extending to a second depth that is less than said first depth.
A semiconductor device, comprising:
- a gate electrode structure laterally embedded in a semiconductor region, said gate electrode structure extending to a first depth in said semiconductor region;
- and
- drain and source regions formed in said semiconductor region and extending to a second depth in said semiconductor region, said second depth being less than said first depth.
Dependencies are inferred from the claim text.