Integrated native device without a halo implanted channel region and method for its fabrication

Abstract

According to one embodiment, a semiconductor structure including an integrated native device without a halo implanted channel region comprises an arrangement of semiconductor devices formed over a common substrate, the arrangement includes native devices disposed substantially perpendicular to non-native devices, wherein each of the native and non-native devices includes a respective channel region. The arrangement is configured to prevent formation of halo implants in the native device channel regions during halo implantation of the non-native device channel regions. In one embodiment, the disclosed native devices comprise native transistors capable of avoiding threshold voltage roll-up for channel lengths less than approximately 0.5 um.

Dependencies are inferred from the claim text.