Scalable integrated MIM capacitor using gate metal
AssigneeBroadcom Corporation
InventorsWei Xia, Xiangdong Chen
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Abstract
According to one embodiment, a scalable integrated MIM capacitor in a semiconductor die includes a high-k dielectric segment over a substrate and a metal segment over the high-k dielectric segment, where the metal segment forms a capacitor terminal of the integrated MIM capacitor. The capacitor further includes a filler laterally separating consecutive capacitor terminals, where the filler can be used as a capacitor dielectric of the integrated MIM capacitor. In one embodiment, the metal segment comprises a gate metal. In another embodiment, the integrated MIM capacitor is formed substantially concurrently with one or more transistors without requiring additional fabrication process steps.
Claims20
An integrated capacitor fabricated in a semiconductor die, said integrated capacitor comprising:
- a filler formed over a substrate of said semiconductor die;
- first and second gate metal terminals formed over said substrate;
- said first and second gate metal terminals laterally separated from one another by said filler;
- said filler and said first and second gate metal terminals configured to produce a capacitance of said integrated capacitor.
A method for fabricating an integrated capacitor in a semiconductor die, said method comprising:
- forming a filler over a substrate of said semiconductor die;
- forming first and second gate metal terminals over said substrate;
- said first and second gate metal terminals laterally separated from one another by said filler;
- said filler and said first and second gate metal terminals configured to produce a capacitance of said integrated capacitor.
An integrated circuit (IC) including at least one CMOS device and at least one integrated capacitor, said at least one integrated capacitor comprising:
- a filler formed over a substrate of said semiconductor die;
- first and second gate metal terminals formed over said substrate;
- said first and second gate metal terminals laterally separated from one another by said filler;
- said filler and said first and second gate metal terminals configured to produce a capacitance of said integrated capacitor.
Dependencies are inferred from the claim text.