Contact bars with reduced fringing capacitance in a semiconductor device
AssigneeGlobalfoundries Inc.
InventorsThilo Scheiper, Sven Beyer, Uwe Griebenow, Jan Hoentschel, Andy Wei
Life of this patent
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Abstract
In sophisticated semiconductor devices, the contact structure may be formed on the basis of contact bars formed in a lower portion of an interlayer dielectric material, which may then be contacted by contact elements having reduced lateral dimensions so as to preserve a desired low overall fringing capacitance. The concept of contact bars of reduced height level may be efficiently combined with sophisticated replacement gate approaches.
Claims20
A method of forming a contact structure in a semiconductor device, the method comprising:
- forming a contact bar in a first interlayer dielectric material, said contact bar connecting to at least one of a drain region and a source region of a transistor and having a first lateral extension along a transistor width direction;
- forming a second interlayer dielectric material above said transistor and said contact bar;
- and
- forming a contact element in said second interlayer dielectric material so as to connect to said contact bar, said contact element having a second lateral extension along said transistor width direction that is less than said first lateral extension.
A method, comprising:
- exposing a contact area of at least one of a drain region and a source region of a transistor of a semiconductor device by removing a portion of a first interlayer dielectric material;
- depositing a conductive material on said exposed contact area;
- removing excess material of said conductive material so as to form at least one contact bar;
- and
- forming a second interlayer dielectric material above said first interlayer dielectric material and said contact bar.
A semiconductor device, comprising:
- a transistor comprising drain and source regions and a gate electrode structure;
- a contact bar formed in an interlayer dielectric material and connecting to one of said drain region and said source region, said contact bar having a first lateral extension along a width direction of said transistor;
- and
- a contact element formed in said interlayer dielectric material so as to connect to said contact bar, said contact element having a second lateral extension along said width direction that is less than said first lateral extension.
Dependencies are inferred from the claim text.