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US 2011/0210379 A1Published application
Fin-jfet
AssigneeMicron Technology, Inc.
InventorsBadih El-Kareh, Leonard Forbes
Life of this patent
Estimating the term…
Abstract
Methods, devices, and systems integrating Fin-JFETs and Fin-MOSFETs are provided. One method embodiment includes forming at least on Fin-MOSFET on a substrate and forming at least on Fin-JFET on the substrate.
Claims20
An integrated circuit, comprising:
- a number of Fin-MOSFETs formed on a substrate;
- and
- a number of Fin-JFETs formed on the substrate;
- wherein a Fin structure associated with the number of Fin-JFETs has a width different than a width of a Fin structure associated with the number of Fin-MOSFETs.
1 more element
An integrated circuit, comprising:
- at least one semiconductor Fin structure formed on a substrate;
- a dielectric material formed over the at least one Fin structure, wherein portions of the dielectric material associated with a source, gate, and drain region of the Fin structure are selectively removed;
- a first conductive material formed over the source and the drain regions;
- and
- a second conductive material formed over the gate region;
- wherein the second conductive material has a different type doping than the first conductive material.
3 more elements
An integrated circuit, comprising:
- at least one Fin-JFET on a substrate;
- at least one Fin-MOSFET on the substrate;
- and
- wherein the at least one Fin-JFET and the at least one Fin-MOSFET have a quasi-planar topography.
1 more element
Dependencies are inferred from the claim text.