Nitride semiconductor device
AssigneeInfineon Technologies Austria AG
InventorsOliver Haeberlen, Walter Rieger
Life of this patent
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Abstract
A semiconductor device is described. In one embodiment, the device includes a Group-III nitride channel layer and a Group-III nitride barrier layer on the Group-III nitride channel layer, wherein the Group-III nitride barrier layer includes a first portion and a second portion, the first portion having a thickness less than the second portion. A p-doped Group-III nitride gate layer section is arranged at least on the first portion of the Group-III nitride barrier layer and a gate contact formed on the p-doped Group-III nitride gate layer.
Claims25
A semiconductor device, comprising:
- a Group-III nitride channel layer;
- a Group-III nitride barrier layer on the Group-III nitride channel layer, the Group-III nitride barrier layer comprising a first portion and a second portion, the first portion having a thickness less than the second portion;
- a p-doped Group-III nitride gate layer section arranged at least on the first portion of the Group-III nitride barrier layer;
- a gate contact on the p-doped Group-III nitride gate layer;
- a source electrode;
- and
- a drain electrode spaced apart from the source electrode.
A semiconductor device, comprising:
- a Group-III nitride channel layer;
- at least a first Group-III nitride barrier layer on the Group-III nitride channel layer;
- a gate layer section on the first Group-III nitride barrier layer, the gate layer section comprising a material selected from the group consisting of a p-doped Group-III nitride semiconductor and a Schottky-contact forming metal;
- at least a second Group-III nitride barrier layer on the first Group-III nitride barrier layer adjacent to the gate layer section;
- a 2-DEG layer at the junction between the Group-III nitride channel layer and the first Group-III nitride barrier layer;
- a gate contact on the gate layer section;
- a source electrode in electrical contact with the 2-DEG layer;
- a drain electrode in electrical contact with the 2-DEG layer and spaced apart from the source electrode.
A semiconductor device, comprising:
- an undoped channel layer comprised of AlaGa1-aN with 0≦a≦1;
- an undoped barrier layer comprising a material selected from the group consisting of AlbGa1-bN (0≦b≦1 and a<b) and AlcIn1-cN (0≦c≦1 and a<c) on the channel layer, the barrier layer having a higher bandgap than the channel layer and forming a heterojunction with the channel layer, the barrier layer comprising a first portion having a thickness less than a second portion of the barrier layer;
- a p-doped gate layer comprising AlzGa1-zN with 0≦z≦1 on and in contact with the first portion of the barrier layer;
- a gate contact on the p-doped gate layer;
- a source electrode;
- a drain electrode spaced apart from the source electrode.
A method for manufacturing a semiconductor device, comprising:
- providing a Group-III nitride channel layer;
- forming a Group-III nitride barrier layer comprising a first portion and a second portion on the Group-III nitride channel layer, the first portion having a thickness less than the second portion;
- forming a p-doped Group-III nitride gate layer section at least on the first portion of the Group-III nitride barrier layer;
- forming a gate contact on the p-doped Group-III nitride gate layer;
- forming a source electrode;
- and
- forming a drain electrode spaced apart from the source electrode.
The method for forming a semiconductor device, comprising:
- providing a Group-III nitride channel layer;
- forming at least a first Group-III nitride barrier layer on the Group-III nitride channel layer;
- forming a p-doped Group-III nitride gate layer section on and in contact with the first Group-III nitride barrier layer;
- forming at least a second Group-III nitride barrier layer on and in contact with the first Group-III nitride barrier layer;
- forming a gate contact on the p-doped Group-III nitride gate layer;
- forming a source electrode;
- forming a drain electrode spaced apart from the source electrode.
Dependencies are inferred from the claim text.