Semiconductor device and method of manufacturing the same

A semiconductor device, comprising:

• an n-type FET, which is formed on a first semiconductor layer of Si1-xGex (0<x≦1);
• and
• a p-type FET, which is formed on the first semiconductor layer,
• the n-type FET comprising:
• a first gate electrode, which is formed on the first semiconductor layer through a first gate insulating film;
• a first source electrode, which is formed on one of two regions holding a first channel region corresponding to the first gate electrode of the first semiconductor layer, the first source electrode made of a compound of a metal and a second semiconductor including a mainly Ge, Fermi energy of the first source electrode located to a conduction band compared with a mid-gap of the first semiconductor layer;
• a first drain electrode, which is formed on the other of two regions holding the first channel region, the drain electrode made of a material of the first semiconductor layer and the metal, Fermi energy of the first drain electrode located to a conduction band compared with a mid-gap of the first semiconductor layer, an edge portion on the gate side of the first drain electrode being far away from an edge portion of the first gate electrode compared with an edge portion on the gate side of the first source electrode;
• and
• a first silicon (Si) thin film, which is formed between the first source electrode and the first channel region, conduction band edge energy of the first Si thin film being higher than conduction band edge energy of the first semiconductor layer,
• the p-type FET being formed of:
• a second gate electrode, which is formed on the first semiconductor layer through a second gate insulating film;
• a second source electrode, which is formed on one of two regions holding a second channel region corresponding to the second gate electrode of the first semiconductor layer, the second source electrode made of a compound of the metal and a second semiconductor including Ge as a main component, Fermi energy of the second source electrode located to a valence band compared with a mid-gap of the first semiconductor layer;
• a second drain electrode, which is formed on the other of two regions holding the second channel region, the second drain electrode made of the metal and a material of the first semiconductor layer, Fermi energy of the drain electrode located to a valence band compared with a mid-gap of the first semiconductor layer, an edge portion on the gate side of the second drain electrode being far away from an edge portion of the second gate electrode compared with an edge portion on the gate side of the second source electrode;
• and
• a second silicon (Si) thin film, which is formed between the second source electrode and the second channel region, valence band edge energy of the second Si thin film being lower than valence band edge energy of the first semiconductor layer.

A method of manufacturing a semiconductor device, comprising:

• forming a gate electrode on a part of a first semiconductor layer of Si1-xGex (0<x≦1) through a gate insulating film;
• etching a source region of source/drain regions holding a channel region corresponding to the gate electrode on the first semiconductor layer to form a trench;
• epitaxially growth of a silicon (Si) thin film on the side of the channel region exposed on the trench;
• forming a second semiconductor layer formed by using germanide (Ge) as a main component in the trench having the Si thin film;
• and
• depositing a metal film on each surface of the source region formed with the second semiconductor layer and the drain region, and thereafter, forming the source region and the drain region, which are modified to a metal compound, by using heat treatment.