Light emitting diodes with n-polarity and associated methods of manufacturing
AssigneeMicron Technology, Inc.
InventorsZaiyuan Ren, Thomas Gehrke
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Abstract
Light emitting diodes (“LEDs”) with N-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the surface of the substrate. The method also includes forming an LED structure with a nitrogen polarity on the surface of the substrate with a nitrogen-rich environment.
Claims30
A method for forming a light emitting diode (LED), comprising:
- exposing a surface of a substrate to a nitrogen-containing composition, the substrate having a substrate material;
- generating a nitrogen-rich environment at least proximate the surface of the substrate with the nitrogen-containing composition;
- adjusting at least one operating parameter of exposing the surface of the substrate to the nitrogen-containing composition such that the nitrogen-containing composition does not react with the substrate material to form a nitrodizing product;
- and
- forming an LED structure on the surface of the substrate with the nitrogen-rich environment, the LED structure having a nitrogen polarity.
A method for forming an LED, comprising:
- exposing a surface of a substrate to a nitrogen-containing composition, the substrate having a substrate material;
- increasing a nitrogen (N) concentration in the substrate material at least proximate the surface of the substrate with the nitrogen-containing composition without forming a nitrodizing product of the substrate material;
- and
- forming an LED structure on the surface of the substrate with a nitrogen-rich environment, the LED structure having a nitrogen polarity.
A method for forming an LED on a substrate having a substrate material, comprising:
- forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product with the substrate material on the surface of the substrate;
- and
- forming an LED structure with a nitrogen polarity on the surface of the substrate with the nitrogen-rich environment.
A light emitting diode, comprising:
- a substrate having a substrate material;
- a first semiconductor material directly on a surface of the substrate;
- an active region on the first semiconductor material, the active region having a nitrogen-polarity crystal structure;
- a second semiconductor material on the active region;
- and
- wherein the light emitting diode does not include a nitrodizing product of the substrate material at an interface between the surface of the substrate and the first semiconductor material.
A method for forming a light emitting diode (LED), comprising:
- forming a gallium nitride (GaN) material on a substrate with a dopant;
- adjusting a concentration of the dopant such that the formed GaN material has substantially nitrogen polarity;
- and
- forming an LED structure on the formed GaN material with the nitrogen polarity, the LED structure also having a nitrogen polarity.
Dependencies are inferred from the claim text.