US 2011/0210347 A1Published application

Semiconductor device and method of manufacturing the same

AssigneeMitsubishi Electric Corporation

InventorToru TAKEGUCHI

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Abstract

A semiconductor device including: a thin film transistor substrate; and a driving circuit, wherein the thin film transistor substrate includes: a thin film transistor includes: a gate electrode; a gate insulating film that is formed on the insulating substrate and the gate electrode; a semiconductor layer that is formed on the gate insulating film; a channel protecting film; and a source electrode and a drain electrode that are formed to connect with the semiconductor layer; and a wiring converting unit that directly and electrically connects a first wiring layer and a second wiring layer through a first contact hole formed in the gate insulating film in the driving circuit, wherein the first wiring layer is formed at the same layer as the gate electrode on the insulating substrate; and wherein the second wiring layer is formed at the same layer as the source electrode and the drain electrode.

Claims16

Dependent claims

A semiconductor device comprising:

a thin film transistor substrate including a thin film transistor;
and
a driving circuit embedded in the thin film transistor substrate,
wherein the thin film transistor substrate comprises:
the thin film transistor comprises:
a gate electrode that is formed on an insulating substrate;
a gate insulating film that is formed on the insulating substrate and the gate electrode;
a semiconductor layer that is formed on the gate insulating film, wherein a crystalline semiconductor part formed at least part of the semiconductor layer includes a channel region;
a channel protecting film that is formed on the channel region of the semiconductor layer to protect the channel region;
and
a source electrode and a drain electrode that are formed to connect with the semiconductor layer;
and
a wiring converting unit that directly and electrically connects a first wiring layer and a second wiring layer through a first contact hole formed in the gate insulating film in the driving circuit,
wherein the first wiring layer is formed at the same layer as the gate electrode on the insulating substrate;
and
wherein the second wiring layer is formed at the same layer as the source electrode and the drain electrode.

13 more elements

A method of manufacturing a semiconductor device, the semiconductor device comprises a thin film transistor substrate including a thin film transistor and a driving circuit embedded in the thin film transistor substrate, the manufacturing method comprising

forming a gate electrode on an insulating substrate;
forming a gate insulating film on the insulating substrate and the gate electrode;
forming a semiconductor layer on the gate insulating film, wherein a crystalline semiconductor part formed at least part of the semiconductor layer includes a channel region;
forming a channel protecting film on the channel region of the semiconductor layer to protect the channel region;
and
forming a source electrode and a drain electrode to be connected with the semiconductor layer;
and
forming a wiring converting unit that directly and electrically connects a first wiring layer and a second wiring layer through a first contact hole formed in the gate insulating film in the driving circuit,
wherein the first wiring layer is formed at the same layer as the gate electrode on the insulating substrate;
and
wherein the second wiring layer is formed at the same layer as the source electrode and the drain electrode,

8 more elements

Dependencies are inferred from the claim text.

Facts

Application: 13/032,978Filed 23 Feb 2011
Priority: JP 2010-04251526 Feb 2010
Published: 1 Sep 2011
Term ends: Not estimatedThe source records don’t support an estimate.

Classification7 codes

H10D 86/60
Characterised by multiple TFTs: wherein the TFTs are in active matrices
H10D 30/0316
Characterised by the gate electrodes: of lateral bottom-gate TFTs comprising only a single gate
H10D 30/0321
Of thin-film transistors [TFT]: comprising silicon, e.g. amorphous silicon or polysilicon
H10D 30/6704
Thin-film transistors [TFT]: having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling…