P-TYPE SiC SEMICONDUCTOR
AssigneeToyota Jidosha Kabushiki Kaisha
InventorsHiroaki Saitoh, Akinori Seki, Tsunenobu Kimoto
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Abstract
A p-type SiC semiconductor includes a SiC crystal that contains Al and Ti as impurities, wherein the atom number concentration of Ti is equal to or less than the atom number concentration of Al. It is preferable that the concentration of Al and the concentration of Ti satisfy the following relations: (Concentration of Al)≧5×1018/cm3; and 0.01%≦(Concentration of Ti)/(Concentration of Al)≦20%. It is more preferable that the concentration of Al and the concentration of Ti satisfy the following relations: (Concentration of Al)≧5×1018/cm3; and 1×1017/cm3≦(Concentration of Ti)≦1×1018/cm3.
Claims5
A p-type SiC semiconductor comprising a SiC crystal that contains, as impurities, Al and Ti, wherein an atom number concentration of Ti is equal to or less than an atom number concentration of Al.
Dependencies are inferred from the claim text.