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US 2011/0210336 A1Published application
Semiconductor Device and Fabrication Method Thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Hideomi Suzawa, Koji Ono, Yoshihiro Kusuyama
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Abstract
For forming a gate electrode, a conductive film with low resistance including Al or a material containing Al as its main component and a conductive film with low contact resistance for preventing diffusion of Al into a semiconductor layer are laminated, and the gate electrode is fabricated by using an apparatus which is capable of performing etching treatment at high speed.
Claims7
A semiconductor device comprising:
- a pixel portion over a substrate;
- and
- an external input terminal portion over the substrate,
- wherein the pixel portion comprises:
- a semiconductor layer;
- a pixel electrode comprising a first conductive layer;
- a gate electrode;
- and
- a gate insulating film between the semiconductor layer and the gate electrode,
- wherein the gate electrode comprises second conductive layer of a laminate of a first layer, a second layer and a third layer, and the first layer is in contact with the gate insulating film, and
- wherein the external input terminal portion has a first portion and a second portion, the first portion including the second conductive layer between the gate insulating film and the first conductive layer.
8 more elements
Dependencies are inferred from the claim text.