Semiconductor Device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorTatsuya Arao
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Abstract
To realize a semiconductor device including a capacitor element capable of obtaining a sufficient capacitor without reducing an opening ratio, in which a pixel electrode is flattened in order to control a defect in orientation of liquid crystal. A semiconductor device of the present invention includes a light-shielding film formed on the thin film transistor, a capacitor insulating film formed on the light-shielding film, a conductive layer formed on the capacitor insulating film, and a pixel electrode that is formed so as to be electrically connected to the conductive layer, in which a storage capacitor element comprises the light-shielding film, the capacitor insulating film, and the conductive layer, whereby an area of a region serving as the capacitor element can be increased.
Claims41
1-35. (canceled)
A semiconductor device comprising:
- a substrate having a pixel portion and a driver circuit portion;
- a first conductive film over the substrate;
- a first insulating film over the first conductive film;
- a thin film transistor over the first insulating film;
- a second insulating film over the thin film transistor;
- a capacitor over the second insulating film;
- a third insulating film over the capacitor, the third insulating film having a planarized surface;
- a pixel electrode on the third insulating film, the pixel electrode electrically connected to the thin film transistor;
- and
- an electrode in the driver circuit portion, the electrode comprising a same material of the pixel electrode,
- wherein the first conductive film is electrically connected with the thin film transistor.
A semiconductor device comprising:
- a substrate having a pixel portion and a driver circuit portion;
- a first conductive film over the substrate;
- a first insulating film over the first conductive film;
- a thin film transistor over the first insulating film;
- a second insulating film over the thin film transistor;
- a capacitor over the second insulating film, the capacitor comprising a lower conductive layer, a capacitor insulating film, and an upper conductive layer;
- a third insulating film over the capacitor, the third insulating film having a planarized surface;
- a pixel electrode on the third insulating film, the pixel electrode electrically connected to the thin film transistor;
- and
- an electrode in the driver circuit portion, the electrode comprising a same material of the pixel electrode,
- wherein at least one part of the thin film transistor is overlapped with a part of the capacitor.
A semiconductor device comprising:
- a substrate having a pixel portion and a driver circuit portion;
- a first conductive film over the substrate;
- a first insulating film over the first conductive film;
- a first thin film transistor and a second thin film transistor over the first insulating film, the first thin film transistor and the second thin film transistor located in the pixel portion and the driver circuit portion, respectively;
- a second insulating film over the first thin film transistor and the second thin film transistor;
- a capacitor over the second insulating film;
- a third insulating film over the second insulating film and the capacitor, the third insulating film having a planarized surface;
- a pixel electrode over the third insulating film;
- and
- an electrode electrically connected to the second thin film transistor in the driver circuit portion, the electrode comprising a same material of the pixel electrode.
A semiconductor device comprising:
- a substrate having a pixel portion and a driver circuit portion;
- a first conductive film over the substrate;
- a first insulating film over the first conductive film;
- a first thin film transistor and a second thin film transistor over the first insulating film, the first thin film transistor and the second thin film transistor located in the pixel portion and the driver circuit portion, respectively;
- a second insulating film over the first thin film transistor and the second thin film transistor;
- a capacitor over the second insulating film, the capacitor comprising a lower conductive layer, a capacitor insulating film, and an upper conductive layer;
- a third insulating film over the second insulating film and the capacitor, the third insulating film having a planarized surface;
- a pixel electrode over the third insulating film;
- and
- an electrode electrically connected to the second thin film transistor in the driver circuit portion, the electrode comprising a same material of the pixel electrode.
Dependencies are inferred from the claim text.