Semiconductor device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsMasami Jintyou, Yamato Aihara
Life of this patent
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Abstract
It is an object to provide a display device of which image display can be favorably recognized. Another object is to provide a manufacturing method of the display device with high productivity. Over a substrate, a pixel electrode that reflects incident light through a liquid crystal layer, a light-transmitting pixel electrode, and a structure whose side surface is covered with a reflective layer and which is positioned to overlap with the light-transmitting pixel electrode are provided. The structure is formed over a light-transmitting etching-stop layer, and the etching-stop layer remains below the structure as a light-transmitting layer.
Claims12
A semiconductor device comprising:
- a structure including a side surface, a bottom surface and a top surface;
- a first pixel electrode;
- a second pixel electrode;
- a first transistor connected to the first pixel electrode;
- and
- a second transistor connected to the second pixel electrode,
- wherein the side surface of the structure is covered by a reflective layer, and
- wherein an area of the bottom surface of the structure is larger than an area of the top surface of the structure.
A manufacturing method of a semiconductor device comprising the steps of:
- forming a first insulating layer over a substrate;
- forming a light-transmitting etching-stop layer over the first insulating layer;
- forming a second insulating layer over the light-transmitting etching-stop layer;
- exposing the light-transmitting etching-stop layer by etching selectively the second insulating layer;
- and
- etching the exposed light-transmitting etching-stop layer.
Dependencies are inferred from the claim text.