Driving transistor of organic light-emitting, method for fabricating the transistor, and organic light-emitting device including the transistor
AssigneeLG Display Co., Ltd.
InventorCheol Se KIM
Life of this patent
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Abstract
A driving TFT for an organic light-emitting display device includes a gate electrode on a portion of a substrate, a gate insulation layer on an entire surface of the substrate including the gate electrode, a semiconductor layer on the gate insulation layer and covering the gate electrode, the semiconductor layer including an n-type impurity layer, and source and drain electrodes overlapping portions of the semiconductor layer at respective sides thereof.
Claims23
1-9. (canceled)
The driving TFT of claim 14, wherein the gate electrode of the driving TFT is connected to a negative driving voltage.
A driving TFT for an organic light-emitting display device comprising:
- a gate electrode on a substrate;
- a gate insulation layer on the substrate including the gate electrode;
- a semiconductor layer on the gate insulation layer and covering the gate electrode, the semiconductor layer including a deposition layer of an n-type impurity layer, an amorphous silicon layer and an n+-type impurity layer;
- and
- source and drain electrodes overlapping portions of the semiconductor layer at respective sides thereof.
A driving TFT for an organic light-emitting display device, comprising:
- a gate electrode on a substrate;
- a gate insulation layer on the substrate including the gate electrode;
- a semiconductor layer on the gate insulation layer and covering the gate electrode, the semiconductor layer including a deposition layer of a first amorphous silicon layer, an n-type impurity layer, a second amorphous silicon layer, and an n+-type impurity layer;
- and
- source and drain electrodes overlapping portions of the semiconductor layer at respective sides thereof.
A method for fabricating a driving TFT for an organic light-emitting display device, comprising:
- forming a gate electrode on a substrate;
- forming a gate insulation layer on the substrate including the gate electrode;
- forming a semiconductor layer on the gate insulation layer, the semiconductor layer covering the gate electrode and including an n-type impurity layer;
- and
- forming source and drain electrodes overlapping portions of the semiconductor layer at respective sides thereof.
An organic light-emitting display device, comprising:
- one or more gate line and one or more data line crossing each other to define one or more pixel region, the one or more gate line in a first direction, and the one or more data line in a second direction;
- a switching transistor at a crossing of the one or more gate line and the one or more data line;
- a storage capacitor between the switching transistor and a ground;
- a driving transistor between the storage capacitor and the switching TFT, wherein the driving transistor has a negative threshold voltage;
- and
- an organic light-emitting diode between a power source and the driving transistor.
The organic light-emitting display device of claim 29, wherein the first n-type impurity silicon layer has a thickness of about 100 Å to about 1000 Å, the intrinsic amorphous silicon layer has a thickness of about 1000 Å to about 3000 Å, and the second n -type impurity silicon layer has a thickness of about 100 Å to about 1000 Å.
Dependencies are inferred from the claim text.