Light emitting diode and method of making the same
AssigneeEpistar Corporation
InventorKuang-Neng YANG
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Abstract
A light emitting diode (LED) and a method of making the same are disclosed. The present invention uses a metal layer of high conductivity and high reflectivity to prevent the substrate from absorbing the light emitted. This invention also uses the bonding technology of dielectric material thin film to replace the substrate of epitaxial growth with high thermal conductivity substrate to enhance the heat dissipation of the chip, thereby increasing the performance stability of the LED, and making the LED applicable under higher current.
Claims20
A light-emitting structure, comprising:
- a layer structure, having a first edge, for emitting light;
- and
- a carrier substrate, having a second edge, bonded to the layer structure and not being a single crystal wafer;
- wherein the light-emitting structure has a light output power of more than 4 mW at 20 mA current.
A light-emitting structure, comprising:
- a layer structure for emitting red light and having a first side and a second side;
- a first ohmic contact layer formed on the first side;
- and
- a substrate formed on the second side;
- wherein the light-emitting structure has a light output power of more than 4 mW at 20 mA current.
A method of making a light-emitting structure, comprising steps of:
- providing a substrate;
- forming a layer structure on the substrate;
- removing the substrate from the layer structure;
- and
- injecting current to the layer structure such that the light-emitting structure has a light output power of more than 4 mW at 20 mA current.
Dependencies are inferred from the claim text.