US 2011/0210326 A1Published application

Semiconductor device

AssigneeSemiconductor Energy Laboratory Co., Ltd.

InventorsHideomi SUZAWA, Shinya SASAGAWA, Motomu KURATA

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Abstract

A semiconductor device includes an oxide semiconductor layer, a source electrode and a drain electrode in contact with the oxide semiconductor layer, a gate electrode overlapping with the oxide semiconductor layer, and a gate insulating layer between the oxide semiconductor layer and the gate electrode, in which the source electrode or the drain electrode comprises a first conductive layer and a second conductive layer having a region which extends beyond an end portion of the first conductive layer in a channel length direction and which overlaps with part of the gate electrode, in which a sidewall insulating layer is provided over the extended region of the second conductive layer, and in which the sidewall insulating layer comprises a stack of a plurality of different material layers.

Claims28

Dependent claims

A semiconductor device comprising:

a semiconductor layer;
a source electrode comprising:
a first conductive layer;
and
a second conductive layer in contact with the semiconductor layer;
a drain electrode comprising:
a third conductive layer;
and
a fourth conductive layer in contact with the semiconductor layer;
a first sidewall insulating layer in contact with the source electrode;
a second sidewall insulating layer in contact with the drain electrode;
a gate electrode overlapping with the semiconductor layer;
and
a gate insulating layer between the semiconductor layer and the gate electrode,
wherein the second conductive layer has a first region which extends beyond an end portion of the first conductive layer in a channel length direction and which overlaps with part of the gate electrode,
wherein the fourth conductive layer has a second region which extends beyond an end portion of the third conductive layer in the channel length direction and which overlaps with part of the gate electrode,
wherein the first sidewall insulating layer is provided on the first region,
wherein the second sidewall insulating layer is provided on the second region, and
wherein the first sidewall insulating layer and the second sidewall insulating layer each comprise a stack of a plurality of different material layers.

16 more elements

A semiconductor device comprising:

a semiconductor layer;
a source electrode comprising:
a first conductive layer;
and
a second conductive layer in contact with the semiconductor layer;
a drain electrode comprising:
a third conductive layer;
and
a fourth conductive layer in contact with the semiconductor layer;
a first sidewall insulating layer in contact with the source electrode;
a second sidewall insulating layer in contact with the drain electrode;
a gate electrode overlapping with the semiconductor layer;
and
a gate insulating layer between the semiconductor layer and the gate electrode,
wherein the second conductive layer has a first region which extends beyond an end portion of the first conductive layer in a channel length direction and which overlaps with part of the gate electrode,
wherein the fourth conductive layer has a second region which extends beyond an end portion of the third conductive layer in the channel length direction and which overlaps with part of the gate electrode,
wherein the first sidewall insulating layer is provided on the first region,
wherein the second sidewall insulating layer is provided on the second region,
wherein the first sidewall insulating layer and the second sidewall insulating layer each comprise a stack of a plurality of different material layers, and
wherein the semiconductor layer is an oxide semiconductor layer.

17 more elements

A semiconductor device comprising:

a semiconductor layer;
a source electrode comprising:
a first conductive layer;
and
a second conductive layer in contact with the semiconductor layer;
a drain electrode comprising:
a third conductive layer;
and
a fourth conductive layer in contact with the semiconductor layer;
a first sidewall insulating layer in contact with the source electrode;
a second sidewall insulating layer in contact with the drain electrode;
a gate electrode overlapping with the semiconductor layer;
and
a gate insulating layer between the semiconductor layer and the gate electrode,
wherein the second conductive layer has a first region which extends beyond an end portion of the first conductive layer in a channel length direction and which overlaps with part of the gate electrode,
wherein the fourth conductive layer has a second region which extends beyond an end portion of the third conductive layer in the channel length direction and which overlaps with part of the gate electrode,
wherein the first sidewall insulating layer is provided on the first region,
wherein the second sidewall insulating layer is provided on the second region,
wherein the first sidewall insulating layer and the second sidewall insulating layer each comprise a stack of a plurality of different material layers, and
wherein a material included in the second conductive layer has higher resistance than a material included in the first conductive layer.

17 more elements

Dependencies are inferred from the claim text.

Facts

Application: 13/029,146Filed 17 Feb 2011
Priority: JP 2010-04313726 Feb 2010
Published: 1 Sep 2011
Term ends: Not estimatedThe source records don’t support an estimate.

Classification11 codes

H10D 30/6755
Characterised by the active materials: oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
H10B 41/30
Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates: characterised by the memory core region
H10B 41/70
Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates: the floating gate being an electrode shared by two or more…
H10D 30/6729
Thin-film transistors [TFT]: characterised by the electrodes