Light-emitting device and method for manufacturing the same

A light-emitting device comprising:

• a pixel portion including a first thin film transistor over a substrate and;
• a driver circuit including a second thin film transistor over the substrate, wherein the first thin film transistor has a different structure from the second thin film transistor,
• wherein the first thin film transistor comprises:
• a first gate electrode layer over the substrate;
• a gate insulating layer over the first gate electrode layer;
• a first source electrode layer and a first drain electrode layer over the gate insulating layer;
• a first oxide semiconductor layer over the gate insulating layer, the first source electrode layer, and the first drain electrode layer;
• a first oxide insulating layer in contact with the first oxide semiconductor layer;
• and
• a connection electrode layer over the gate insulating layer, wherein the connection electrode layer is electrically connected to one of the first source electrode layer and the first drain electrode layer,
• wherein the pixel portion comprises:
• a color filter layer over the first oxide insulating layer;
• a pixel electrode over the color filter layer, wherein the pixel electrode is electrically connected to the connection electrode layer;
• a light-emitting layer over the pixel electrode;
• and
• an electrode over the light-emitting layer,
• wherein the first gate electrode layer, the gate insulating layer, the first oxide semiconductor layer, the first source electrode layer, the first drain electrode layer, and the first oxide insulating layer have a light-transmitting property, and
• wherein the first oxide insulating layer is in contact with a side surface of the first oxide semiconductor layer and a side surface of the other one of the first source electrode layer and the first drain electrode layer.

A method for manufacturing a light-emitting device, comprising:

• forming a first gate electrode layer and a second gate electrode layer over a substrate having an insulating surface;
• forming a gate insulating layer over the first gate electrode layer and the second gate electrode layer;
• forming a first source electrode layer and a first drain electrode layer over the gate insulating layer, wherein the first source electrode layer and the first drain electrode layer overlap with the first gate electrode layer;
• forming a first oxide semiconductor layer over the gate insulating layer, wherein the first oxide semiconductor layer overlaps with the first gate electrode layer, a part of the first source electrode layer, and a part of the first drain electrode layer;
• forming a connection electrode layer electrically connected to the first drain electrode layer, over the gate insulating layer;
• forming a second oxide semiconductor layer which overlaps with the second gate electrode layer;
• forming a second source electrode layer and a second drain electrode layer over the second oxide semiconductor layer,
• forming an oxide insulating layer in contact with a top surface and a side surface of the first oxide semiconductor layer and a top surface of the second oxide semiconductor layer;
• forming a color filter layer over the oxide insulating layer which overlaps with the first oxide semiconductor layer;
• forming a pixel electrode electrically connected to the connection electrode layer, over the color filter layer;
• forming a light-emitting layer over the pixel electrode;
• and
• forming an electrode over the light-emitting layer.