Semiconductor light emitting device having multi-cell array and method for manufacturing the same

A semiconductor light emitting device comprising:

• a substrate;
• a plurality of light emitting cells arranged on the substrate, each of the light cells including a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed therebetween;
• and
• an interconnection structure electrically connecting at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of the light emitting cell to at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of another light emitting cell,
• wherein a part of the light emitting cells emit red light, a part of the light emitting cells emit green light, and the others emit blue light.

A method for manufacturing a semiconductor light emitting device, the method comprising:

• forming a first light emitting structure by sequentially growing a first-conductivity-type semiconductor layer, a first active layer, and a second-conductivity-type semiconductor layer on a first region of a substrate;
• forming a second light emitting structure by sequentially growing a first-conductivity-type semiconductor layer, a second active layer, and a second-conductivity-type semiconductor layer on a second region of a substrate;
• forming a third light emitting structure by sequentially growing a first-conductivity-type semiconductor layer, a third active layer, and a second-conductivity-type semiconductor layer on a third region of a substrate;
• and
• forming an interconnection structure to electrically connect the first to third light emitting structures,
• wherein one of the first to third active layers emits red light, another emits green light, and the other emits blue light.

A method for manufacturing a semiconductor light emitting device, the method comprising:

• growing a first-conductivity-type semiconductor layer on a substrate;
• growing first to third active layers in first to third regions of the first-conductivity-type semiconductor layer;
• growing a second-conductivity-type semiconductor layer to cover the first to third active layers;
• forming first to third light emitting structures by removing a portion of the second-conductivity-type semiconductor layer so that the second-conductivity-type semiconductor layer corresponding to positions of the first to third active layers is left;
• and
• forming an interconnection structure to electrically connect the first to third light emitting structures,
• wherein one of the first to third active layers emits red light, another emits green light, and the other emits blue light.