Chemical mechanical polishing stop layer for fully amorphous phase change memory pore cell
AssigneeInternational Business Machines Corporation
InventorsMatthew J. Breitwisch, Chung H. Lam
Life of this patent
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Abstract
A method for fabricating a phase change memory pore cell that includes forming a bottom electrode, forming a dielectric layer on the bottom electrode, and forming a sacrificial layer on the dielectric layer. The method further includes selectively etching portions of the sacrificial layer and the dielectric layer to define a pore extending through the sacrificial layer and the dielectric layer, depositing phase change material on the sacrificial layer and into the pore and removing the phase change material formed outside the pore, removing the sacrificial layer to expose the pore, the pore being vertically aligned, and forming a top electrode over the pore.
Claims20
A method for fabricating a phase change memory pore cell, the method comprising:
- forming a bottom electrode;
- forming a dielectric layer on the bottom electrode;
- forming a sacrificial layer on the dielectric layer;
- selectively etching through portions of the sacrificial layer and the dielectric layer so as to define a pore extending through the sacrificial layer and the dielectric layer;
- depositing phase change material on the sacrificial layer and into the pore and removing the phase change material formed outside of the pore;
- removing the sacrificial layer to expose the pore, the pore being vertically aligned;
- and
- forming a top electrode over the pore.
A phase change memory pore cell comprising:
- a bottom electrode layer comprising a bottom electrode;
- and
- a memory cell layer formed on top of the bottom electrode layer, the memory cell layer comprising:
- a dielectric layer formed over the bottom electrode layer,
- a top electrode formed over the dielectric layer, the top electrode being spaced apart from the bottom electrode;
- the dielectric layer including a pore being vertically aligned and bounded by the top electrode and the bottom electrode, the pore is in electrical communication with the top electrode and the bottom electrode and comprises phase change material switchable between electrical property states.
A memory device comprising:
- one or more phase change memory elements;
- a bottom electrode in contact with each of the one or more phase change memory elements;
- and
- a top electrode in contact with each of the one or more phase change memory elements and being spaced apart from the bottom electrode,
- each phase change memory element comprising:
- a dielectric layer formed over the bottom electrode, the dielectric layer including a pore being vertically aligned and bounded by the top electrode and the bottom electrode, the pore is in electrical communication with the top electrode and the bottom electrode and comprises phase change material switchable between electrical property states.
Dependencies are inferred from the claim text.