Memory cell that includes a carbon-based memory element and methods of forming the same
OwnerYubao Li, Er-Xuan Pinginventors
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Abstract
A method of forming a reversible resistance-switching metal-carbon-metal (“MCM”) device is provided, the device including a first conducting layer, a second conducting layer, and a reversible resistance-switching element disposed between the first and second conducting layers, wherein the reversible resistance-switching element includes thermal CVD graphitic material and includes a highly resistive region that favors crack formation. Other aspects are also provided.
Claims67
A reversible resistance-switching metal-carbon-metal (“MCM”) device comprising:
- a first conducting layer;
- a second conducting layer;
- and
- a reversible resistance-switching element disposed between the first and second conducting layers, wherein the reversible resistance-switching element includes thermal CVD graphitic material and includes a highly resistive region that favors crack formation.
A method of forming a reversible resistance-switching metal-insulator-metal (“MCM”) structure, the method comprising:
- forming first and second conducting layers;
- and
- forming a reversible resistance-switching element between the first and second conducting layers, wherein the reversible resistance-switching element includes a thermal CVD graphitic material and has a highly resistive region that favors crack formation.
A method of forming a reversible resistance-switching metal-carbon-metal (“MCM”) structure, the method comprising:
- forming a feature having a first width and a second width smaller than the first width;
- and
- disposing a reversible resistance-switching element on a sidewall of the feature, wherein the reversible resistance-switching element includes thermal CVD graphitic material.
A method of forming a reversible resistance-switching metal-carbon-metal (“MCM”) structure, the method comprising:
- forming a first conducting layer;
- forming a first insulating material layer above the first conducting layer;
- forming a second insulating material layer above the first insulating material layer, the second insulating material being different than the first insulating material;
- forming a second conducting layer above the second insulating layer;
- and
- disposing a reversible resistance-switching element on the second conducting layer, the first insulating material layer and the second insulating material layer, wherein the reversible resistance-switching element includes thermal CVD graphitic material.
A method of forming a memory cell, the method comprising:
- forming a first conductor;
- forming a feature above the first conductor, the feature having a first portion having a first width and a second portion having a second width smaller than the first width;
- forming a reversible resistance-switching element on a sidewall of the feature, wherein the reversible resistance-switching element includes thermal CVD graphitic material;
- and
- forming a second conductor above the reversible resistance-switching element.
A method of forming a memory cell, the method comprising:
- forming a first conductor;
- forming a first insulating material layer above the first conductor, wherein the first insulating material layer has a first width;
- forming a second insulating material layer above the first insulating layer, wherein the second insulating material is different from the first insulating material, and wherein the second insulating material layer has the first width;
- shrinking the first insulating material layer to a second width smaller than the first width;
- forming a reversible resistance-switching element on the shrunken first insulating material layer and the second insulating material layer, wherein the reversible resistance-switching element includes thermal CVD graphitic material;
- and
- forming a second conductor above the reversible resistance-switching element.
A memory cell comprising:
- a first conductor;
- a feature disposed above the first conductor, the feature having a first portion having a first width and a second portion having a second width smaller than the first width;
- a reversible resistance-switching element disposed on a sidewall of the feature, wherein the reversible resistance-switching element includes thermal CVD graphitic material;
- and
- a second conductor disposed above the reversible resistance-switching element.
A memory cell comprising:
- a first conductor;
- a first insulating material layer disposed above the first conductor, wherein the first insulating material layer has a second width;
- a second insulating material layer disposed above the first insulating layer, wherein the second insulating material is different from the first insulating material, and wherein the second insulating material layer has a first width;
- a reversible resistance-switching element disposed on the first insulating material layer and the second insulating material layer, wherein the reversible resistance-switching element includes thermal CVD graphitic material;
- and
- a second conductor disposed above the reversible resistance-switching element.
Dependencies are inferred from the claim text.