Method of manufacturing thin-film light-absorbing layer, and method of manufacturing thin-film solar cell using the same

A method of manufacturing a CIS-based thin-film solar cell, comprising:

• forming a back contact layer on a glass substrate using sputtering;
• spraying on the back contact layer a mixture solution comprising CuCl2, InCl3 and SeC(NH2)2 precursor solutions mixed under a nitrogen atmosphere at room temperature, and performing selenization, thus forming a CIS-based light-absorbing layer;
• forming a buffer layer on the light-absorbing layer using chemical vapor deposition;
• forming a window layer on the buffer layer using sputtering;
• and
• forming an upper electrode layer on the window layer.

A method of manufacturing a CIGS-based thin-film solar cell, comprising:

• forming a back contact layer on a glass substrate using sputtering;
• spraying on the back contact layer a mixture solution comprising CuCl2, InCl3, GaCl3 and SeC(NH2)2 precursor solutions mixed under a nitrogen atmosphere at room temperature, and performing selenization, thus forming a CIGS-based light-absorbing layer;
• forming a buffer layer on the light-absorbing layer using chemical vapor deposition;
• forming a window layer on the buffer layer using sputtering;
• and
• forming an upper electrode layer on the window layer.

A thin-film solar cell, comprising:

• a substrate;
• a back contact layer formed on the substrate using sputtering;
• a light-absorbing layer formed on the back contact layer by mixing precursor solutions comprising CuCl2, InCl3 and SeC(NH2)2 under a nitrogen atmosphere at room temperature thus preparing a mixture solution, spraying the mixture solution on the substrate, drying the mixture solution, and performing selenization under a selenium atmosphere;
• a buffer layer deposited on the light-absorbing layer using chemical bath deposition;
• a window layer formed on the buffer layer using sputtering;
• and
• an upper electrode layer formed on the window layer using sputtering.