Methods and apparatus for deposition processes

A substrate support, comprising:

• a susceptor ring having an inner edge to support a substrate on the inner edge;
• a central support having a supporting member radially extending from the central support to support the susceptor ring on the supporting member, the supporting member having a plurality of lift pin supporting surfaces on a susceptor ring facing side of the supporting member, each lift pin supporting surface having a hole disposed through each lift pin supporting surface between the susceptor ring facing side and a backside of the supporting member;
• and
• a plurality of lift pins, each lift pin moveably disposed through the hole in each lift pin supporting surface and supported by the lift pin supporting surface when the lift pin is in a retracted position.

A method of selectively depositing an epitaxial layer on a substrate, comprising:

• providing a process chamber having an inner volume with a substrate support disposed in the inner volume with a substrate disposed on the substrate support, wherein the inner volume comprises a first inner volume above the substrate support and a second inner volume below an upper surface of the substrate support and wherein the substrate has a first surface for depositing an epitaxial layer on the first surface and a second surface;
• flowing a deposition gas to deposit the epitaxial layer on the first surface of the substrate at a first chamber pressure;
• flowing an etching gas into the first volume to selectively etch a second layer deposited on the second surface;
• and
• flowing a pressurizing gas into the second volume simultaneously with flowing the etching gas into the first volume to raise the chamber pressure to a second chamber pressure greater than the first chamber pressure at a desired pressure ramping rate.