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AssigneeSub-One Technology, Inc.
InventorsDeepak Upadhyaya, Karthik Boinapally, William J. Boardman, Matthew MaMoody, Thomas B. Casserly, Pankaj Jyoti Hazarika, Duc Doan
Estimating the term…
A method and apparatus for plasma enhanced chemical vapor deposition to an interior region of a hollow, tubular, high aspect ratio workpiece are disclosed. A plurality of anodes are disposed in axially spaced apart arrangement, to the interior of the workpiece. A process gas is introduced into the region. A respective individualized DC or pulsed DC bias is applied to each of the anodes. The bias excites the process gas into a plasma. The workpiece is biased in a hollow cathode arrangement. Pressure is controlled in the interior region to maintain the plasma. An elongated support tube arranges the anodes, and receives a process gas tube. A current splitter provides a respective selected proportion of a total current to each anode. One or more notch diffusers or chamber diffusers may diffuse the process gas or a plasma moderating gas. Plasma impedance and distribution may be controlled using various means.
A method for plasma enhanced chemical vapor deposition (CVD) to an interior region of a hollow tubular high aspect ratio workpiece, the method comprising:
An apparatus for chemical vapor deposition to an elongated interior region of a hollow tubular workpiece, comprising:
An apparatus for chemical vapor deposition to an elongated interior region of a hollow tubular workpiece of high aspect ratio comprising:
A chemical vapor deposition interior-coated apparatus comprising a hollow tubular substrate of high aspect ratio greater than or equal to about thirty to one with a diamond-like or doped diamond-like coating layer having a substantially uniform thickness greater than about twenty microns and a substantially uniform hardness greater than about nine gigapascals.
Dependencies are inferred from the claim text.