Methods of forming pillars for memory cells using sequential sidewall patterning

A mask for patterning a memory array comprising:

• a structure formed with first features formed from a first template layer disposed above a memory layer stack, first sidewall spacers formed adjacent the first features, second features that extend in a first direction in a mask layer formed by using the first sidewall spacers as a hardmask, a second template layer deposited on the mask layer, third features formed from the second template layer, second sidewall spacers formed adjacent the third features, and fourth features that extend in a second direction in the mask layer formed by using the second sidewall spacers as a hardmask.

A mask for patterning a memory array comprising:

• a structure formed with first features formed from a first template layer disposed above a memory layer stack, first sidewall spacers formed adjacent the first features, second features formed from a second template layer using the first sidewall spacers as a hardmask, second sidewall spacers formed adjacent the second features, third features that extend in a first direction in a mask layer formed by using the second sidewall spacers as a hardmask, a third and fourth template layer deposited on the mask layer, fourth features formed from a third template layer, third sidewall spacers formed adjacent the fourth features, fifth features formed from the fourth template layer using the third sidewall spacers as a hardmask, fourth sidewall spacers formed adjacent the fifth features, and sixth features that extend in a second direction in the mask layer formed by using the fourth sidewall spacers as a hardmask.