Loading patent…
OwnerHong-jun Gao, Yi Pan +7inventors
InventorsHong-jun Gao, Yi Pan, Min Gao, Jinhai Mao, Li Huang, Haitao Zhou, Yeliang Wang, Haiming Guo, Shixuan Du
Estimating the term…
A method of preparing the electronic material called silicon intercalated epitaxial monolayer graphene comprises the steps of growing large scale high-quality graphene on metal surface, depositing silicon on the prepared epitaxial graphene and annealing to high temperature to intercalate the silicon to the interface of graphene and metal surface. Depending on the quantity of the silicon deposited on the graphene surface, the numbers of the silicon layers on the interface can be controlled and adjusted.
A method of preparing an electronic material called silicon intercalated epitaxial monolayer graphene comprises steps of growing large scale high-quality graphene on metal surface, depositing silicon on the prepared epitaxial graphene and annealing to high temperature to intercalate said silicon to an interface of graphene and metal surface wherein numbers of silicon layers on said interface can be controlled depending on the quantity of said silicon deposited on said graphene surface.
Dependencies are inferred from the claim text.