Semiconductor device fabrication method and semiconductor device

A semiconductor device fabrication method comprising:

• forming a second material film over a first material film, which is formed over a work substrate, both the first and second material films are different in material;
• forming a first resist pattern of a uniform pattern density including a desired pattern and a dummy pattern over the second material film;
• forming a second material film pattern by doing anisotropic dry etching of the second material film using the first resist pattern as a mask;
• removing the first resist pattern;
• covering a part corresponding to the desired pattern in the second material film pattern with a second resist pattern;
• removing a part corresponding to the dummy pattern in the second material film pattern using the second resist pattern as a mask;
• removing the second resist pattern;
• and
• doing anisotropic dry etching of the first material film using the second material film pattern remained in the part corresponding to the desired pattern as a mask.

A semiconductor device fabrication method comprising:

• forming a second material film over a first material film, which is formed over a work substrate, both the first and second material films are different in material;
• forming a first resist pattern of a uniform pattern density including a desired pattern and a dummy pattern over the second material film;
• slimming the first resist pattern;
• forming a second material film pattern by doing anisotropic dry etching of the second material film using the slimmed first resist pattern as a mask;
• removing the slimmed first resist pattern;
• covering a part corresponding to the desired pattern in the second material film pattern with a second resist pattern;
• removing a part corresponding to the dummy pattern in the second material film pattern using the second resist pattern as a mask;
• removing the second resist pattern;
• and
• doing anisotropic dry etching of the first material film using the second material film pattern remained in the part corresponding to the desired pattern as a mask.

A semiconductor device fabrication method comprising:

• forming a second material film over a first material film, which is formed over a work substrate, both the first and second material films are different in material;
• forming a first resist pattern of a uniform pattern density including a desired pattern and a dummy pattern over the second material film;
• forming a second material film pattern by doing anisotropic dry etching of the second material film using the first resist pattern as a mask;
• removing the first resist pattern;
• slimming the second material film pattern;
• covering a part corresponding to the desired pattern in the slimmed second material film pattern with a second resist pattern;
• removing a part corresponding to the dummy pattern in the slimmed second material film pattern using the second resist pattern as a mask;
• removing the second resist pattern;
• and
• doing anisotropic dry etching of the first material film using the slimmed second material film pattern remained in the part corresponding to the desired pattern as a mask.

A semiconductor device fabrication method comprising:

• forming a second material film over a first material film, which is formed over a work substrate, both the first and second material films are different in material;
• forming a first resist pattern of a uniform pattern density including a desired pattern and a dummy pattern over the second material film;
• slimming the first resist pattern;
• forming a second material film pattern by doing anisotropic dry etching of the second material film using the slimmed first resist pattern as a mask;
• removing the slimmed first resist pattern;
• slimming the second material film pattern;
• covering a part corresponding to the desired pattern in the slimmed second material film pattern with a second resist pattern;
• removing a part corresponding to the dummy pattern in the slimmed second material film pattern using the second resist pattern as a mask;
• removing the second resist pattern;
• and
• doing anisotropic dry etching of the first material film using the slimmed second material film pattern remained in the part corresponding to the desired pattern as a mask.