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US 2011/0086508 A1Published application
Semiconductor device having metal wirings of laminated structure
AssigneeFujitsu Semiconductor Limited
InventorsHideaki Kikuchi, Kouichi Nagai, Jirou Miura
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Abstract
A semiconductor device that includes a metal wiring formed on the insulating film and having a main wiring portion laminated with a plurality of metal films and a metal protection film formed at least on the upper surfaces of the main wiring portion and made of a precious metal material.
Claims10
A method of manufacturing a semiconductor device, comprising:
- forming an insulating film over a semiconductor substrate;
- forming main wiring portion laminated with a plurality of metal films on the insulating film;
- obtaining metal wiring composed of the main wiring portion and a metal protection film by forming the metal protection film made of a precious metal at least on an upper surface of the main wiring portion using a plating method;
- forming an interlayer insulating film on the metal wiring;
- and
- forming via holes reaching to the metal wiring by etching the interlayer insulating film.
3 more elements
Dependencies are inferred from the claim text.