Methods for forming integrated circuits
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuo Bin HUANG, Hsin-Chien LU, Ryan Chia-Jen CHEN, Chi-Ming YANG, Chyi Shyuan CHERN, Chin-Hsiang LIN
Life of this patent
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Abstract
A method for forming an integrated circuit is provided. The method includes forming a gate dielectric structure over a substrate. A titanium-containing sacrificial layer is formed, contacting the gate dielectric structure. The whole titanium-containing sacrificial layer is substantially removed.
Claims17
A method for forming an integrated circuit, the method comprising:
- forming a gate dielectric structure over a substrate;
- forming a titanium-containing sacrificial layer contacting the gate dielectric structure;
- and
- substantially removing the whole titanium-containing sacrificial layer.
A method for cleaning a carbon-containing organic residue over a high-k gate dielectric layer, the method comprising:
- forming a high-k gate dielectric layer over a substrate, wherein the high-k gate dielectric layer has at least one carbon-containing organic chemical on a surface of the high-k gate dielectric layer;
- forming a titanium-containing sacrificial layer covering the high-k gate dielectric layer, wherein a titanium component of the titanium-containing sacrificial layer is capable of substantially interacting with the at least one carbon-containing organic chemical to form a product;
- and
- substantially removing the whole titanium-containing sacrificial layer and the product.
A method for forming an integrated circuit, the method comprising:
- patterning a capping layer over a high-k gate dielectric layer by a photoresist layer, the capping layer covering a first portion of the high-k gate dielectric layer and exposing a surface of a second portion of the high-k gate dielectric layer;
- removing the photoresist layer;
- forming a titanium-containing sacrificial layer covering the capping layer and the surface of the second portion of the high-k gate dielectric layer;
- substantially removing the whole titanium-containing sacrificial layer;
- and
- forming a titanium-containing gate electrode material over the high-k gate dielectric layer.
Dependencies are inferred from the claim text.