Semiconductor chip having island dispersion structure and method for manufacturing the same

A method for manufacturing a semiconductor chip comprising the steps of:

• (1) forming a semiconductor device layer in a main surface region on one surface of a semiconductor silicon wafer;
• (2) grinding a back surface which is another surface of the semiconductor silicon wafer up to a predetermined thickness after the step (1);
• (3) forming a porous silicon domain layer in the back surface of the semiconductor silicon wafer after the step (2);
• and
• (4) dicing a worked semiconductor wafer obtained through the steps (1) to (3), and
• the step (3) including bringing a mixed vapor generated from a mixed liquid of hydrofluoric acid and nitric acid into contact with the back surface of the semiconductor silicon wafer.

A method for manufacturing a semiconductor chip comprising the steps of:

• (i) forming a semiconductor device layer in a main surface region on one surface of a semiconductor silicon wafer;
• (ii) grinding a back surface which is another surface of the semiconductor silicon wafer up to a predetermined thickness after the step (i);
• (iii) forming a dimple layer in the back surface of the semiconductor silicon wafer after the step (ii);
• and
• (iv) dicing a worked semiconductor wafer obtained through the steps (i) to (iii), and
• the step (iii) including performing wet etching and/or dry etching on the back surface of the semiconductor silicon wafer.