Method for manufacturing a mos semiconductor memory device, and plasma cvd device
AssigneesTokyo Electron Limited, Tohoku University
InventorsTetsuo Endoh, Masayuki Kohno, Syuichiro Otao, Minoru Honda, Toshio Nakanishi
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Abstract
To manufacture a MOS semiconductor memory device having an insulating film laminate in which adjacent insulating films have band-gaps of different sizes, a plasma processing device which transmits microwaves to a chamber by means of a planar antenna having a plurality of holes is used to perform plasma CVD under pressure conditions that differ from at least pressure conditions used when forming the adjacent insulating films, and the insulating films are sequentially formed by altering the band-gaps of the adjacent insulating films that constitute the insulating film laminate.
Claims11
A method for manufacturing a MOS semiconductor memory device where an insulating film laminate in which a plurality of insulating films are stacked is formed as a charge accumulation region between a semiconductor layer and a gate electrode, the method comprising
- forming the insulating film laminate by sequentially forming the insulating films in such a way that sizes of band-gaps of adjacent insulating films constituting the insulating film laminate are altered, by plasmatizing a material gas under pressure conditions that differ from at least pressure conditions used when forming the adjacent insulating film and performing plasma CVD, by using a plasma processing device which transmits microwaves to a processing chamber by means of a planar antenna having a plurality of holes formed therein.
A plasma CVD apparatus which forms an insulating film on an object to be processed by using a plasma CVD method, the plasma CVD apparatus comprising:
- a processing chamber in which the object to be processed is held on a holding stage and received;
- a dielectric member which closes an opening portion of the processing chamber;
- an antenna which is formed outside the dielectric member and through which microwaves are transmitted to the processing chamber;
- a gas supply mechanism which supplies a material gas into the processing chamber;
- an exhaust mechanism which exhausts the processing chamber to be depressurized;
- and
- a control unit which, when a MOS semiconductor memory device having an insulating film laminate in which a plurality of insulating films are stacked as a charge accumulation region between a semiconductor layer and a gate electrode is to be manufactured, controls the insulating film laminate to be formed by sequentially forming the insulating films in such a way that sizes of band-gaps of adjacent insulating films constituting the insulating film laminate are altered, by plasmatizing the material gas by the microwaves under pressure conditions that differ from at least pressure conditions used when forming the adjacent insulating films and performing plasma CVD in the processing chamber.
Dependencies are inferred from the claim text.