Method for selective formation of trench
AssigneeUnited Microelectronics Corp.
InventorsPin-Chien Chu, Shin-Chi Chen, Po-Lun Cheng
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Abstract
A method for selective formation of trenches is disclosed. First, a substrate is provided. The substrate includes a first semiconductor element and a second semiconductor element. The first semiconductor element has a dopant. Second, a wet etching procedure is carried out to selectively form a pair of trenches in the substrate around the second semiconductor element, a first source/drain ion implantation is selectively carried out on the first semiconductor element, or a second source/drain ion implantation is selectively carried out on the second semiconductor element.
Claims15
A method for selective formation of trenches, comprising:
- providing a substrate comprising a first semiconductor element having a dopant and a second semiconductor element;
- performing a wet etching procedure to selectively form a pair of trenches in said substrate around said second semiconductor element;
- performing a first source/drain ion implantation on said first semiconductor element;
- and
- performing a second source/drain ion implantation on said second semiconductor element.
Dependencies are inferred from the claim text.