Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device, comprising:

• forming a first insulating film on a semiconductor substrate, the first insulating film having first and second portions;
• removing a part of the semiconductor substrate by using the first insulating film as an etching mask to form first and second pillars of the semiconductor substrate;
• forming a second insulating film on side surfaces of the first and second pillars;
• forming a silicon film on the first insulating film and the second insulating film, the silicon film facing to the side surfaces of the first and second pillars with an intervention of the second insulating film therebetween;
• introducing p-type impurity into the silicon film disposed over the side surface of the first pillar to form a p-type silicon film;
• introducing n-type impurity into the silicon film disposed over the side surface of the second pillar to form an n-type silicon film;
• removing a first part of the silicon film by dry etching using a gas including chlorine, the first part of the silicon film being located on upper surfaces of the first and second portions of the first insulating film;
• forming a coating film over the semiconductor substrate, the coating film covering the upper surfaces of the first and second portions of the first insulating film;
• removing a part of the coating film to expose the first insulating film and a second part of the silicon film, the second part of the silicon film being located on side surfaces of the first and second portions of the first insulating film;
• and
• removing the second part of the silicon film by dry etching using a gas including fluorine.