Semiconductor device, and manufacturing method of semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei YAMAZAKI, Yasuyuki ARAI, Ikuko KAWAMATA
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Abstract
In order to form a plurality of semiconductor elements over an insulating surface, in one continuous semiconductor layer, an element region serving as a semiconductor element and an element isolation region having a function to electrically isolate element regions from each other by repetition of PN junctions. The element isolation region is formed by selective addition of an impurity element of at least one or more kinds of oxygen, nitrogen, and carbon and an impurity element that imparts an opposite conductivity type to that of the adjacent element region in order to electrically isolate elements from each other in one continuous semiconductor layer.
Claims9
A manufacturing method of a semiconductor device comprising the steps of:
- forming a semiconductor layer over an insulating surface,
- forming an element region and an element isolation region including a first impurity element and a second impurity element in the semiconductor layer by selective addition of the first impurity element of at least one or more kinds of oxygen, nitrogen, and carbon and the second impurity element that imparts one conductivity type, to the semiconductor layer,
- forming an insulating layer over the element region and the element isolation region,
- forming a conductive layer over the element region and the insulating layer, and
- forming a source region and a drain region having an opposite conductivity type to that of the second impurity element in the element region.
A manufacturing method of a semiconductor device comprising the steps of:
- forming a semiconductor layer over an insulating surface,
- forming an insulating layer over the semiconductor layer,
- forming an element region and an element isolation region including a first impurity element and a second impurity element in the semiconductor layer by selective addition of the first impurity element of at least one or more kinds of oxygen, nitrogen, and carbon and the second impurity element that imparts one conductivity type, to the semiconductor layer through the insulating layer,
- forming a conductive layer over the element region and the insulating layer, and
- forming a source region and a drain region having an opposite conductivity type to that of the second impurity element in the element region.
A manufacturing method of a semiconductor device comprising the steps of:
- selectively adding a first impurity element of at least one or more kinds of oxygen, nitrogen, and carbon and a second impurity element that imparts one conductivity type, to a semiconductor to form an element isolation region;
- and
- forming an element region in the semiconductor wherein the element region includes a channel region, a source region and a drain region,
- wherein the source region and the drain region have an opposite conductivity type to the conductivity type of the second impurity element, and
- wherein the element isolation region is in contact with one of the source region and the drain region.
Dependencies are inferred from the claim text.