Hybrid orientation semiconductor structure with reduced boundary defects and method of forming same

A method of forming a semiconductor structure comprising:

• providing a bilayer template stack comprising a direct semiconductor bonded (DSB) silicon layer of a (011) surface orientation disposed on a base silicon layer having a (001) surface orientation, wherein an in-plane <110> direction of the DSB layer and an in-plane <110> direction of the base silicon layer are aligned to be parallel;
• implanting amorphizing ions into selected regions of the DSB silicon layer to amorphize the selected regions down to said base silicon layer, leaving original-orientation regions of DSB layer in regions not so implanted, wherein edges of the selected regions are aligned with the in-plane <100> directions of the base silicon layer;
• performing a recrystallization anneal to convert said amorphized selected regions into changed-orientation regions having the (001) surface orientation of the base silicon layer, wherein edges of said changed-orientation and original orientation silicon regions are separated by a near-vertical boundary in a boundary region that is essentially defect free;
• and
• forming a first device on an original-orientation region of said DSB layer and forming a second device on a changed-orientation region of said DSB layer.