Semiconductor having enhanced carbon doping
AssigneeFinisar Corporation
InventorRalph H. Johnson
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Abstract
Methods for fabricating semiconductors with enhanced strain. One embodiment includes fabrication of a semiconductor device with an epitaxial structure. The epitaxial structure is formed with one or more semiconductor layers. One or more of the layers includes a dopant including small quantities of Al and repeated delta doping during expitaxial growth to form periods where surfaces are group III rich.
Claims5
A method of fabricating a VCSEL epitaxial structure including epitxial layers, the method comprising:
- forming a bottom mirror on a substrate wherein forming a bottom mirror comprises forming alternating layers of materials with different indices of refraction;
- forming a first conduction layer region on the bottom mirror;
- forming an active layer region that contains quantum wells on the first conduction layer region;
- forming a second conduction layer region on the active layer region;
- forming a top mirror on the second conduction layer region;
- and
- applying a dopant including small quantities of Al and repeated delta doping during expitaxial growth.
The method as recited in claim 11, wherein a resulting sheet resistance of the conduction layers in the second conduction layer region is about 250 ohms/square>Rs>100 ohms/square.
Dependencies are inferred from the claim text.