Flip-chip light emitting diodes and method of manufacturing thereof

A process for preparing a flip-chip nitride-based light emitting device having an active layer between an n-type clad layer and a p-type clad layer, comprising:

• a) forming an interface modification layer on the p-type clad layer of a light emitting structure including the n-type clad layer, active layer and p-type clad layer sequentially stacked on a substrate;
• b) forming at least one transparent conductive thin film layer made up of transparent conductive materials on the interface modification layer;
• c) forming a reflective layer on the transparent conductive thin film layer;
• and
• d) annealing the structure formed in step c).

A process for preparing a flip-chip nitride-based light emitting device having an active layer between an n-type clad layer and a p-type clad layer, comprising:

• a) forming a multi-ohmic contact layer via stacking of an interface modification layer and at least one transparent conductive thin film layer, as a stack repeat unit, on the p-type clad layer of a light emitting structure including the n-type clad layer, active layer and p-type clad layer sequentially stacked on a substrate;
• b) forming a reflective layer on the multi-ohmic contact layer;
• and
• c) annealing the structure formed in step b).